PART |
Description |
Maker |
MSM538001E MSM538001E-XXGS-K MSM538001E-XXRS |
1,048,576字8位MASKROM From old datasheet system 1,048,576-Word x 8-Bit MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
MSM531602E MSM531602E-XXGS-K MSM531602E-XXRS MSM53 |
1,048,576-Word X 16-Bit or 2,097,152-Word x 8-Bit MASKROM 1,048,576字16位或2097152字8MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
M6MGB166S4BWG M6MGT166S4BWG M6MGB E99008 |
From old datasheet system CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Semiconductor
|
HM514400ALT-7 HM514400ALZ-6 HM514400ALZ-8 HM514400 |
JT 42C 42#22 SKT WALL RECP 1,048,576-WORD x 4-BIT DYNAMIC RAM 1,048,576字4位动态随机存储器 LJT 37C 37#22D SKT RECP
|
Hitachi,Ltd.
|
VG26S18165CJ-5 VG26V18165CJ-6 VG26VS18165C VG26S18 |
1,048,576 x 16 - Bit CMOS Dynamic RAM 1M X 16 EDO DRAM, 60 ns, PDSO42 1,048,576 x 16 - Bit CMOS Dynamic RAM 1M X 16 EDO DRAM, 50 ns, PDSO42 1/048/576 x 16 - Bit CMOS Dynamic RAM
|
Vanguard International ... Vanguard International Semiconductor, Corp.
|
TC514400JL TC51440JL-10 TC51440JL-80 TC51440ZL-10 |
80 ns, 4-bit generation dynamic RAM 1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器 100 ns, 4-bit generation dynamic RAM
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
MSM538031E MSM538001E-XXTS-K |
1,048,576-Word x 8-Bit MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
TC514402AP |
1,048,576 x 4 BIT DYNAMIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
MR53V8002J-XXTP MR53V8002J MR53V8002J-XXMA MR53V80 |
524,288-Word x 16-bit or 1,048,576 x 8-Bit MASK ROM
|
OKI[OKI electronic componets]
|
FM27C010 FM27C010N120 FM27C010N150 FM27C010N90 FM2 |
1,048,576-Bit 128K x 8 High Performance CMOS EPROM 1/048/576-Bit 128K x 8 High Performance CMOS EPROM CONN HEADER .100 72POS DUAL TIN 128K X 8 OTPROM, 90 ns, PDIP32 CONN HEADER .100 72POS DL GOLD
|
FAIRCHILD[Fairchild Semiconductor] Davies Molding, LLC FAIRCHILD SEMICONDUCTOR CORP
|